Effects of energy band structure on gallium arsenide based MOSFET
This research work is focused on material science and semiconductor engineering. It emphasized on the semiconductor material such as Gallium arsenide (GaAs). The Gallium arsenide semiconductor material was used as a group III-V compound for metal-oxide semiconductor field effect transistor (MOSFET) modeling. The band-gap energy structures were analyzed by using material parameters such as Varshni parameters, temperature and doping concentrations. Then, an electrical characteristic was carried out depending on the current and voltage relationship. The current flowing in the device is associated with a gate voltage applied to the device. From this paper, the analysis of MOSFET modeling was investigated using mathematical equations and MATLAB simulation.
R. C. Purandare, Investigations on: A homojunction of GaAs using synchrotron radiation, B surface passivation of GaAs, PhD thesis, Savitribai Phule Pune University, India, 2004.
R. Clerc, A. Spinelli, G. Ghibaudo, and G. Pananakakis, “Theory of direct tunneling current in metal-oxide-semiconductor structures”, J Appl Physics, vol. 91, no. 3, pp. 1400–1409, 2002.
T. E. Schlesinger, “Gallium arsenide” in Encyclopedia of Materials: Science and Technology, 2nd ed., pp. 3431-3435 2001; doi: 10.1016/b0-08-043152-6/00612-4
E. F. Schubert, Doping in III-V semiconductors, Cambridge University Press: Cambridge, UK, 2004.
W-H. Lee and P. Y. Su, “Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors”, Nanotechnol., vol. 20, no. 6, 2009.
A. Challam, C. R. A. J. Chelliah, D. Nirmal, and R. Swaminathan, “Design and fabrication of GaAs based MOSFET by physical vapor deposition method”, Materials Focus, vol. 7, pp. 1–6, 2018.
V. O. A. Akpaida, O. Omorogiuwa, and M. S. Okundamiya, Principles of Electronic Devices and Circuits, Stemic Publications: Benin City, 2005.
M. Lundstrom and Z. Ren, “Essential physics of carrier transport in nanoscale MOSFETs”, IEEE Trans Electron Devices, vol. 49, no. 1, pp. 133 – 141, 2002.
R. F. Pierret, Semiconductor Device Fundamentals, Addison Wesley: Boston, MA, 1996.
S. S. Li, Semiconductor Physical Electronics, Springer-Verlag: New York, 2006.
Y. J. Yoon, S. Cho, J. H. Seo, E-S. Cho, S-W. Kang, J-H. Bae, et al., “Design of AlGaAs/InGaAs heterojunction tunneling field-effect transistor for low-standby-power and high-performance application”, Int. Conference on Solid State Devices and Materials, Fukuoka, 2013, pp. 178-179.
X. Gu, C. W. Myles, A. Kuthi, Q. Shui, and M. A. Gundersen, Gallium arsenide and silicon FET-type switches for repetitive pulsed power applications, Proceedings of the 2002 Int. Power Modulator Conference and High Voltage Workshop, June 30-July 3, 2002, Hollywood, CA, pp. 437-440.
G. Sun, Y. Sun, and T. Nishida, “Hole mobility in silicon inversion layers: stress and surface orientation”, J Appl Physics, vol. 102, no. 084501, 2007; doi: 10.1063/1.2795649
B. Van Zeghbroeck, “Principles of Semiconductor Devices”, University of Colorado, 2011, https://ecee.colorado.edu/~bart/book/book/title.htm (Accessed July 18, 2020)
Copyright (c) 2020 Wut Hmone Kyaw, May Nwe Myint Aye
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.